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triquint semiconductor: www. triquint.com (972)994-8465 fax (972)994-8504 info-mmw@tqs.com 1 TGC4402-SM mar 2007 ? rev - datasheet subject to change without notice. primary applications product description key features measured performance 18 ? 26 ghz packaged upconverting mixer ? rf output frequency range: 18 - 26 ghz ? if input frequency range: 0.5 ? 3 ghz ? conversion loss: 9 db ? input toi: 18 dbm ? lo input power: 19 dbm ? bias: vmxr = -0.9 v ? package dimensions: 4 x 4 x 0.9 mm ? point-to-point radio ? k band sat-com the TGC4402-SM upconverting mixer is designed to support a variety of millimeter wave applications including point-to-point digital radio and k band sat-com. the TGC4402-SM provides 9 db nominal conversion loss across 18-26 ghz . typical lo input drive is 19 dbm across the band. the input if frequency is 0.5 ? 3 ghz. the TGC4402-SM requires only 2 off-chip components. each device is 100% dc and rf tested on-wafer to ensure performance compliance. the device is available in chip form. the TGC4402-SM has a protective surface passivation layer providing environmental robustness. lead-free and rohs compliant bias conditions: vg = -0.9 v, lo input @ 19 dbm, if = 2ghz @ -5 dbm typical 0 1 2 3 4 5 6 7 8 9 10 11 12 18 19 20 21 22 23 24 25 26 output frequency (ghz) conversion loss (db) usb lsb 0 5 10 15 20 25 18 19 20 21 22 23 24 25 26 output frequency (ghz) input toi (dbm) usb lsb
triquint semiconductor: www. triquint.com (972)994-8465 fax (972)994-8504 info-mmw@tqs.com 2 TGC4402-SM mar 2007 ? rev - table ii recommended operating conditions table i absolute maximum ratings 1/ symbol parameter value notes vmxr gate supply voltage range -5 - 0 v pin lo input continuous wave power 25 dbm symbol parameter value vmxr gate voltage -0.9 v 1/ these ratings represent the maximum operable values for this device. stresses beyond those listed under ?absolute maximum ratings? may cause permanent damage to the device and / or affect device lifetime. these are stress ratings only, and functional operation of the device at these conditions is not implied. table iii rf characterization table bias: vmxr = -0.9 v, t a = 25 c + 5 c symbol parameter test conditions nominal units f out rf output frequencies 18 - 26 ghz f if if input frequency 0.5 - 3 ghz f lo lo input frequency 16 - 26 ghz p lo lo input power f = 16 - 26 ghz 19 dbm conversion loss f = 18 - 26 ghz 9 db itoi input toi f = 18 - 26 ghz 18 dbm lo ? rf output isolation f = 16 - 26 ghz 40 db conversion loss temperature coefficient f = 16 - 26 ghz -0.006 db / c
triquint semiconductor: www. triquint.com (972)994-8465 fax (972)994-8504 info-mmw@tqs.com 3 TGC4402-SM mar 2007 ? rev - table iv power dissipation and thermal properties 1/ for a median life, tm, of 1e+6 hours, power dissipation is limited to pd(max) = (tbd oc ? tbase oc)/ jc. 2/ channel operating temperature will directly affect the device median time to failure (mttf). for maximum life, it is recommended that channel temper atures be maintained at the lowest possible levels. parameter test conditions value notes maximum power dissipation tbaseplate = 70 oc pd = 0.45 w tchannel = 138 oc tm = 1.0e+6 hrs 1/ 2/ thermal resistance, jc lo input power is 17 dbm jc = 76 (oc/w) tchannel = 121 oc tm = >1e+6 hrs mounting temperature 30 seconds 320 oc max storage temperature -65 to 150 oc
triquint semiconductor: www. triquint.com (972)994-8465 fax (972)994-8504 info-mmw@tqs.com 4 TGC4402-SM mar 2007 ? rev - measured data 0 1 2 3 4 5 6 7 8 9 10 11 12 16 17 18 19 20 21 22 23 24 25 26 output frequency (ghz) conversion loss (db) usb lsb 0 5 10 15 20 25 16 17 18 19 20 21 22 23 24 25 26 output frequency (ghz) input toi (dbm) usb lsb bias conditions: vg = -0.9 v, lo input @ + 19 dbm, if = 2 ghz @ -5 dbm typical
triquint semiconductor: www. triquint.com (972)994-8465 fax (972)994-8504 info-mmw@tqs.com 5 TGC4402-SM mar 2007 ? rev - measured data 0 5 10 15 20 25 30 35 -1.5 -1.4 -1.3 -1.2 -1.1 -1 -0.9 -0.8 -0.7 -0.6 -0.5 -0.4 -0.3 -0.2 -0.1 bias voltage (v) conversion loss (db) usb 0 5 10 15 20 25 30 35 -1.5 -1.4 -1.3 -1.2 -1.1 -1 -0.9 -0.8 -0.7 -0.6 -0.5 -0.4 -0.3 -0.2 -0.1 bias voltage (v) conversion loss (db) lsb bias conditions: vg = -0.9 v, lo input @ 20 ghz @ 19 dbm, if = -5 dbm typical
triquint semiconductor: www. triquint.com (972)994-8465 fax (972)994-8504 info-mmw@tqs.com 6 TGC4402-SM mar 2007 ? rev - measured data 0 1 2 3 4 5 6 7 8 9 10 0.511.522.533.5 if frequency, ghz conversion loss, db usb 0 1 2 3 4 5 6 7 8 9 10 0.511.522.533.5 if frequency, ghz conversion loss, db lsb bias conditions: vg = -0.9 v, lo input = 19 dbm, lo freq = 20 ghz
triquint semiconductor: www. triquint.com (972)994-8465 fax (972)994-8504 info-mmw@tqs.com 7 TGC4402-SM mar 2007 ? rev - measured data 0 5 10 15 20 25 30 35 40 45 50 16 17 18 19 20 21 22 23 24 lo frequency (ghz) l-r isolation (db) lo input = 19 dbm bias conditions: vg = -0.9 v, if = 2 ghz @ -5 dbm typical
triquint semiconductor: www. triquint.com (972)994-8465 fax (972)994-8504 info-mmw@tqs.com 8 TGC4402-SM mar 2007 ? rev - package pinout pin description 1, 3, 4, 6, 8, 9, 10, 11, 12, 14, 16 n/c 2 if input 5, 13 vmxr 7 lo input 15 rf out 17 gnd pin #1 identification 1 2 3 4 56 7 8 12 11 10 9 13 14 15 16 17 pin #1 dot top view bottom view
triquint semiconductor: www. triquint.com (972)994-8465 fax (972)994-8504 info-mmw@tqs.com 9 TGC4402-SM mar 2007 ? rev - electrical schematic bias procedures TGC4402-SM lo in rf out if in vmxr bias-up procedure ? vmxr set to -0.9 v ? apply signal to if input ? apply signal to lo input bias-down procedure ? turn off if and lo signals ? set vmxr to 0 v 100 pf
triquint semiconductor: www. triquint.com (972)994-8465 fax (972)994-8504 info-mmw@tqs.com 10 TGC4402-SM mar 2007 ? rev - gaas mmic devices are susceptible to damage from electrostatic discharge. pr oper precautions should be observed during handling, assembly and test. mechanical drawing units: millimeters thickness: 0.85 pkg x,y size tolerance: +/- 0.050
triquint semiconductor: www. triquint.com (972)994-8465 fax (972)994-8504 info-mmw@tqs.com 11 TGC4402-SM mar 2007 ? rev - gaas mmic devices are susceptible to damage from electrostatic discharge. pr oper precautions should be observed during handling, assembly and test. recommended assembly diagram part description c1 (optional) 1 uf capacitor (0402) c2, c3 100 pf capacitor (0402) r1 0 ohm resistor (0603) c1 c2 r1 c3 c1 c2 r1 c3
triquint semiconductor: www. triquint.com (972)994-8465 fax (972)994-8504 info-mmw@tqs.com 12 TGC4402-SM mar 2007 ? rev - gaas mmic devices are susceptible to damage from electrostatic discharge. pr oper precautions should be observed during handling, assembly and test. assembly notes ordering information part package style TGC4402-SM qfn 4x4 surface mount recommended surface mount package assembly ? proper esd precautions must be followed while handling packages. ? clean the board with acetone. rinse with alcohol. allow the circuit to fully dry. ? triquint recommends using a conductive solder paste for attachment. follow solder paste and reflow oven vendors? recommendations when developing a solder reflow profile. typical solder reflow profiles are listed in the table below. ? hand soldering is not recommended. solder paste can be applied using a stencil printer or dot placement. the volume of solder paste depends on pcb and component layout and should be well controlled to ensure consistent mechanical and electrical performance. ? clean the assembly with alcohol. reflow profile snpb pb free ramp-up rate 3 c/sec 3 c/sec activation time and temperature 60 ? 120 sec @ 140 ? 160 c 60 ? 180 sec @ 150 ? 200 c time above melting point 60 ? 150 sec 60 ? 150 sec max peak temperature 240 c 260 c time within 5 c of peak temperature 10 ? 20 sec 10 ? 20 sec ramp-down rate 4 ? 6 c/sec 4 ? 6 c/sec typical solder reflow profiles

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